Pwodwi yo> IR reseptè> IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake
IR Phototransistor nan twou 2-Pin pake

IR Phototransistor nan twou 2-Pin pake

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    • Kalite peman: T/T,Paypal
    • Incoterm: FOB,EXW,FCA
    • Min. Lòd: 5000 Piece/Pieces
    • Transpòtasyon: Ocean,Land,Air
    • Port: SHENZHEN
    Kapasite Pwovizyon pou & Lòt Enfòmasyon
    Additional Information

    Anbalajbwat katon

    Pwodiktivite1000000000 pcs/week

    TranspòtasyonOcean,Land,Air

    Kote orijinLachin

    Pwovizyon pou kapasite7000000000 pcs/week

    SètifikaGB/T19001-2008/ISO9001:2008

    HS Kòd8541401000

    PortSHENZHEN

    Kalite pemanT/T,Paypal

    IncotermFOB,EXW,FCA

    Atribi pwodwi yo

    Modèl Pa gen.3106PT850D-A3

    BrandPi bon dirije

    Kalite Ekipman PouOrijinal manifakti

    Materyèl ReferansFèy done

    EspèsDirije

    Kalite PakeAtravè twou

    CertificationOther

    UsageOther

    ApplicationElectronic Products

    Luminous IntensityHigh Directivity

    ColorOther

    FormationGold Thread

    TypeInfrared Led

    Inner PackingAnti-Static Bag

    PolarityShort Pin Mark Cathode

    Range Of Spectral Bandwidth700-1100nm

    Type Of LensBlack Lens

    Collector-Emitter Voltage30v

    Emitter-Collector Voltage5v

    Wavelenghth Of Peak Sensitivity850nm

    Package Quantity1000pcs/Bag

    Half Sensitivity Angle60degree

    1000PCS Weight200g

    Anbalaj & akouchman
    Vann Inite: Piece/Pieces
    Kalite pake: bwat katon
    Videyo Konpayi
    Tape atravè-twou ki ap dirije kòm yon teren bobine
    Deskripsyon Product

    IR Reseptè 3162PT850D-A3


    Ki diferans ki genyen ant pèfòmans fotodyod ak fototransistè?

    1. Phototransistor ka konsidere kòm estrikti entegre fotodyode ak tranzistò. Karakteristik li yo se karakteristik pwodiksyon fotodyode ak karakteristik tranzistò.
    2. Photodiodes yo ka itilize kòm sous vòltaj oswa aktyèl (sa vle di selil fotovoltaik) san ekipman pou pouvwa adisyonèl.
    3. fototransistè a dwe opere ak yon ekipman pou pouvwa ekstèn, pou li ka pwodiksyon pi gwo aktyèl pase fotodyode a, paske li te anplifye pa tranzistò a.

    850nm ir LED

    - Size: 

    - Chip Number: 1 chips

    - Color: 850nm 

    - Type: Black  clear

    - Chip brand: Tyntek

    - 60 degree

    - Different color are available

    - Different wavelength are available

    - Warranty: 5 Years

    - RoHS, REACH, EN62471

    - Uniform light output

    - Long life-solid state reliability

    - Low Power consumption

    -Anti UV epoxy resin package

    -High temperature resistance






    - Gwosè 3 mm IR Through-hole LED -

    IR LED

    *Ka sa a disponib tou pou lòt ki ap dirije, tankou: 5mm vèt nan twou ki ap dirije, UV ki ap dirije, 660nm ki ap dirije, 940nm ki ap dirije, 5mm ki ap dirije ble ki nan twou, ki ap dirije jòn, ki ap dirije jòn, elatriye *

    - Travay nan twou IR ki ap dirije -

    PT850 led

    * Koulè nan foto a te pran pa kamera, tanpri pran aktyèl koulè emèt kòm estanda.

    - Atravè twou IR LED Paramèt -

    Parameter

    Symbol

    Min

    Typ

    Max

    Unit

    Test Condition

    Collector-Emitter Voltage

    VCEO

    30 V

    Emitter-Collector Voltage

    VECO

    5 V

    Collector Dark Current

    ICEO


    100

    nA

    VCE=20V

    Ee=0mw/cm2

    Collector-Emitter

    Breakdown Voltage

    Bvceo

    30

    100

    V

    ICBO=100uA

    Ee=0mw/cm2

    Emitter-Collector

    Breakdown Voltage

    Bvceo

    6


    V

    IECO=10uA

    Collector-Emitter

    Saturation Voltage

    VCE(sat)


    0.4

    V

    IC=2mA

    IB=100uA

    Ee=1mw/cm2

    Photocurrent 1

    IPCE

    30


    90

    uA

    Vce=5V

    Ee=1mw/cm2

    λP=850nm

    Photocurrent 2

    IPCE 90
    270 uA

    VCE=5V

    Ee=1mw/cm2

    λP=940nm

    Current gain

    hFE

    270


    900

    uA

    VCE=5V

    IC=2mA

    Wavelenghth of Peak Sensitivity

    λP 850


    nm


    Range of Spectral Bandwidth

    λ0.5

    400


    1100

    nm


    Response Time-Rise Time

    tR

    15

    us

    Vce=5v

    Ic=1mA

    RL=1000Ω

    Response Time-Fall Time

    tF
    15
    us

    Half Sensitivity angle

    △λ

    ±10

    deg

    Collector-base Capacitance

    CCB

    8 PF F=1MHz,VCB=3V

    - Koneksyon fil lò -

    infrared led

    * Pou kenbe tout lavi ki ap dirije a, faktori BestLED sèvi ak fil lò pi bon kalite pou koneksyon andedan sikwi.

    - IR ki ap dirije anbalaj -

    infrared LED packaged

    * Nou ka pake dirije sa a ak nenpòt ki kantite pakè ak kole oswa pliye broch ki ap dirije yo kòm kondisyon ou.

    - Ki gen rapò enfrawouj ki ap dirije -

    IR LED

    - Pwosesis pwodiksyon -

    LED LAMP

    - LED IR atravè twou -

    Through -hol led

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    Category: IR reseptè
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