Pwodwi yo> Dirije lanp> Enfrawouj ki ap dirije lanp> 5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W
5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W

5mm 850Nm enfrawouj ki ap dirije 45-degre lantiy ble 0.2W

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    • Incoterm: FOB,EXW,FCA
    • Min. Lòd: 5000 Piece/Pieces
    • Transpòtasyon: Ocean,Land,Air
    • Port: SHENZHEN
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    Additional Information

    AnbalajBwat katon

    Pwodiktivite1000000000 pcs/week

    TranspòtasyonOcean,Land,Air

    Kote orijinPòslèn

    Pwovizyon pou kapasite7000000000 pcs/week

    SètifikaGB/T19001-2008/ISO9001:2008

    HS Kòd8541401000

    PortSHENZHEN

    Kalite pemanT/T,Paypal,Western Union

    IncotermFOB,EXW,FCA

    Atribi pwodwi yo

    Modèl Pa gen.503IRBT-85L/12I60-45A

    BrandPi bon ki ap dirije

    Kalite Ekipman PouOrijinal manifakti

    Materyèl ReferansFèy done, Foto

    Kote OrijinLachin

    EspèsDirije

    Kalite PakeAtravè twou

    Wavelength850nm

    Power0.2W

    CertificationRoHs

    Luminous IntensityHigh Directivity

    FormationGold Thread

    TypeInfrared LED

    Current60mA

    Radiation Intensity20-30mw/sr

    PolarityShort Pin Mark Cathode

    Type Of LensBlue Lens

    Beam Width45 Degree

    Antistatic Bag1000PCS/Bag

    Voltage1.6V

    Anbalaj & akouchman
    Vann Inite: Piece/Pieces
    Kalite pake: Bwat katon
    Videyo Konpayi
    Tape atravè-twou ki ap dirije kòm yon teren bobine
    Deskripsyon Product
    Enfrawouj lanp ki ap dirije 503irbt-85L/12I60-45A se yon enfrawouj ki te pake ki pake pa Tyntek (yon mak pi popilè ki ap dirije chip soti nan Taiwan) 12mil IR dirije fè ak lantiy epoksidik ble. Sa yo ki ap dirije 850nm gen yon lavi ki long fyab eta solid. 300um*300um algaas/algaas enfrawouj chip ak 45 degre IR dirije se yon komen ki ap dirije enfrawouj, ki se gen yon radyasyon long, gwo klète ak vòltaj ki ba. Paske nan materyèl la nan dirije chip, enfrawouj ki ap dirije gen anpil pi ba vòltaj pase wouj dirije chip, ble, vèt ak blan ki ap dirije chip. Men, vòltaj la ki ba pa pral limite aktyèl la nan dirije a. Se konsa, tout ki ap dirije a IR ap gen vòltaj ki ba. For these 5mm blue case through-hole LED, we also can package it with 680nm led, 700nm led, 720nm led, 730nm led, 740nm led, 750nm led, 760nm led, 770nm led, 780nm led, 800nm ​​led, 810nm led, 820nm dirije, 830Nm ki ap dirije, 840Nm ki ap dirije, 850Nm ki ap dirije, 880Nm ki ap dirije, 900Nm ki ap dirije, 920Nm ki ap dirije, 950Nm ki ap dirije, 1000nm ki ap dirije, 1050Nm ki ap dirije, 1100Nm ki ap dirije, 1200Nm ki ap dirije, 1300Nm ki ap dirije, 1550Nm dirije ECT. Sa yo 5mm 850nm enfrawouj dirije te pake pa lantiy ble. Enfrawouj ki ap dirije gen yon longèdonn ki pi long ki limyè vizib. Moun pa ka wè li ak je a toutouni. Si ou bezwen lòt ang pou sa a IR dirije, jis santi yo lib yo fè nou konnen epi nou ka pwodwi sa a te dirije kòm kondisyon ou.


    850nm infrared led

    - Size: 5.0*H8.7mm

    - Chip Number:1 chips

    - Color: 850nm 

    - Type: Blue clear

    - Chip brand: Tyntek


    - Different color are available

    - Different wavelength are available

    - Warranty: 5 Years

    - RoHS, REACH, EN62471

    - Uniform light output

    - Long life-solid state reliability

    - Low Power consumption

    -Anti UV epoxy resin package

    -High temperature resistance






    - gwosè nan 5 mm IR nan -twou dirije -

    5mm IR LED Size

    - nan -twou IR dirije radyan -

    Infrared LED 45 degree

    *Koulè nan foto a te pran pa kamera, tanpri pran aktyèl émettant koulè kòm estanda.

    - nan -twou IR dirije paramèt -


    Evalyasyon maksimòm absoli nan Ta = 25

    Parameter

    Symbol

    Rating

    Power Dissipation

    Pd

    80mW

    Pulse Forward Current

    IFP

    1000mA

    Forward Current

    IF

    60mA

    Reverse Voltage

    VR

    5V

    Junction Temperature

    Tj

    115°C

    Operating Tempertature

    Topr

    -40 - +80°C

    Storage Tempertature

    Tstg

    -40 - +100°C

    Soldering Temperature

    Tsol

    260°C

    Electro-Static-Discharge(HBM)

    ESD

    2000v

    Warranty

    Time

    5Years

    Antistatic bag

    Piece

    1000Back

    *Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.

    *Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

    Karakteristik optik ak elektrik ( t c = 25 )

    Parameter

    Symbol

    Min

    Typ

    Max

    Unit

    Test Condition

    Forward Voltage

    VF

    1.5

    1.9

    V

    IF=50mA

    Pulse Forward Voltage

    VF

    2.6

    V

    IFP=500mA

    Radiant Intensity

    IE

    20

    30

    mw/sr

    IF=50mA

    Peak Wavelength

    λP

    840

    850

    860

    nm

    IF=50mA

    Total Radiated Power

    PO

    6

    mw

    IF=50mA

    Half Width

    Dl

    50

    nm

    IF=50mA

    Viewing Half Angle

    2q1/2

    ±22

    deg

    IF=50mA

    Reverse Current

    IR

    5

    uA

    VR=5V

    Rise Time

    Tr

    25

    ns

    IF=50mA

    Fall Time

    Tf

    13

    ns

    IF=50mA

    *Luminous Intensity is measured by ZWL600.

    *q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

    *lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

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